Rohm and Haas Electronic Materials, a leading supplier of materials for semiconductor packaging, has entered into a joint development agreement with IBM to develop, as well as evaluate, new materials for emerging packaging technologies. The agreement will focus on the evaluation of photoresists and supporting ancillaries, and low-temperature photodielectric materials for IBM's 3D packaging technologies. Rohm and Haas and IBM will also develop new materials for wafer-level and capillary underfill applications. The joint collaboration will be performed at IBM's T. J. Watson Research Center in Yorktown Heights, NY, and at Rohm and Haas Electronic Materials' Technology Center in Marlborough, MA.
22-Dec-08 
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